Dual NPN/PNP Bipolar Junction Transistor (BJT) in a SOT-563 surface mount package. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a transition frequency of 140MHz and a minimum hFE of 120. Operates across a temperature range of -55°C to 150°C with a power dissipation of 500mW. Packaged on a 4000-count tape and reel, this component is lead-free and RoHS compliant.
Frequency140MHz
PackageSOT-563
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi EMZ1DXV6T1G technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
400mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
6V
Frequency
140MHz
Gain Bandwidth Product
140MHz
hFE Min
120
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
4000
Packaging
Tape and Reel
Polarity
PNP, NPN
Power Dissipation
500mW
RoHS Compliant
Yes
Transition Frequency
140MHz
DC Rated Voltage
-60V
Compliance
RoHS
Compliant
Datasheet
Onsemi EMZ1DXV6T1G Datasheet
Download the complete datasheet for Onsemi EMZ1DXV6T1G to view detailed technical specifications.
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