Dual NPN/PNP Bipolar Junction Transistor (BJT) in a SOT-563 surface mount package. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a transition frequency of 140MHz and a minimum hFE of 120. Operates across a temperature range of -55°C to 150°C with a power dissipation of 500mW. Packaged on a 4000-count tape and reel, this component is lead-free and RoHS compliant.
Frequency140MHz
PackageSOT-563
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi EMZ1DXV6T1G technical specifications.
General
| Package/Case | SOT-563 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 140MHz |
| Gain Bandwidth Product | 140MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP, NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi EMZ1DXV6T1G Datasheet
Download the complete datasheet for Onsemi EMZ1DXV6T1G to view detailed technical specifications.
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