
Ultra low capacitance transient voltage suppressor diode for high-speed data line protection. Features bidirectional polarity, a maximum operating temperature of 125°C, and a minimum operating temperature of -55°C. Offers a repetitive peak reverse voltage of 5.5V, a minimum breakdown voltage of 6.5V, and a nominal breakdown voltage of 7.3V. Maximum clamping voltage is 19V with a maximum non-repetitive peak reverse power dissipation of 34W. This two-terminal silicon diode has a single element with bottom terminal position.
Onsemi ESD8011MUT5G technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5.5 |
| Breakdown Voltage-Min | 6.5 |
| Non-rep Peak Rev Power Dis-Max | 34 |
| Clamping Voltage-Max | 19 |
| Breakdown Voltage-Nom | 7.3 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Onsemi ESD8011MUT5G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.