Ultra-low capacitance transient voltage suppressor diode for RF ESD protection. Features bidirectional polarity, SILICON diode element material, and a single element configuration. Operating temperature range from -55°C to 150°C. Maximum reverse voltage is 5.3V, with a breakdown voltage range of 7V to 12V. Maximum clamping voltage is 20V and maximum power dissipation is 0.3W.
PolarityBIDIRECTIONAL
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Technical Specifications
Onsemi ESD8472MUT5G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5.3 |
| Breakdown Voltage-Min | 7 |
| Clamping Voltage-Max | 20 |
| Breakdown Voltage-Nom | 7 |
| Breakdown Voltage-Max | 12 |
| Power Dissipation-Max | 0.3 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi ESD8472MUT5G Datasheet
Download the complete datasheet for Onsemi ESD8472MUT5G to view detailed technical specifications.
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