Bidirectional Transient Voltage Suppressor Diode in a 0201 form factor, offering extremely low voltage ESD protection. Features ultra-low insertion loss suitable for Thunderbolt, USB 3.x, and PCIe applications. Operates across a wide temperature range from -55°C to 150°C with a maximum operating voltage of 1V. Breakdown voltage ranges from 1.4V to 2.1V, with a nominal value of 1.6V. Maximum clamping voltage is 7.5V, and maximum power dissipation is 0.313W.
PolarityBIDIRECTIONAL
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Technical Specifications
Onsemi ESDL2012MX4T5G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 1 |
| Breakdown Voltage-Min | 1.4 |
| Clamping Voltage-Max | 7.5 |
| Breakdown Voltage-Nom | 1.6 |
| Breakdown Voltage-Max | 2.1 |
| Power Dissipation-Max | 0.313 |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi ESDL2012MX4T5G Datasheet
Download the complete datasheet for Onsemi ESDL2012MX4T5G to view detailed technical specifications.
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