N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This SuperFET™ series component offers a low 190mΩ Rds On (max) and 208W power dissipation. Designed for through-hole mounting in a TO-3P package, it boasts fast switching speeds with a 62ns turn-on delay and 65ns fall time. Operating from -55°C to 150°C, this RoHS compliant MOSFET is supplied in a 30-piece rail/tube.
MountingThrough Hole
PolarityN-CHANNEL
Power208W
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Technical Specifications
Onsemi FCA20N60F technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
600V
Element Configuration
Single
Fall Time
65ns
Gate to Source Voltage (Vgs)
30V
Height
20.1mm
Input Capacitance
3.08nF
Lead Free
Lead Free
Length
16.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Rds On Max
190mR
RoHS Compliant
Yes
Series
SuperFET™
Turn-Off Delay Time
230ns
Turn-On Delay Time
62ns
Weight
6.401g
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FCA20N60F Datasheet
Download the complete datasheet for Onsemi FCA20N60F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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