N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 76A continuous drain current. This single-element transistor offers a low 36mΩ Rds On (max) and 543W maximum power dissipation. Designed for high-speed switching, it exhibits a 32ns fall time and 34ns turn-on delay. Packaged in TO-3P for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C.
MountingThrough Hole
PolarityN-CHANNEL
Power543W
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Technical Specifications
Onsemi FCA76N60N technical specifications.
General
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 12.385nF |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 543W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 235ns |
| Turn-On Delay Time | 34ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCA76N60N Datasheet
Download the complete datasheet for Onsemi FCA76N60N to view detailed technical specifications.
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