
N-channel Power MOSFET featuring SUPERFET® Easy Drive technology. 600V drain-source breakdown voltage and 3.9A continuous drain current. Low 1.2Ω maximum drain-source on-resistance. Surface mount DPAK package with 50W power dissipation. Fast switching times with 16ns turn-on and 36ns turn-off delays.
Onsemi FCD4N60TM technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.2R |
| Dual Supply Voltage | 600V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 600V |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCD4N60TM to view detailed technical specifications.
No datasheet is available for this part.
