N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.6A continuous drain current. This Easy Drive MOSFET offers a maximum drain-source on-resistance of 950mΩ and a power dissipation of 54W. Packaged in a DPAK surface-mount case, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 12ns turn-on delay and a 22ns fall time. RoHS compliant and lead-free.
PackageDPAK
Current Rating4.6A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FCD5N60TM technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
4.6A
Current Rating
4.6A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
810mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
950MR
Element Configuration
Single
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
2.39mm
Input Capacitance
600pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
54W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
54W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperFET™
Threshold Voltage
5V
Turn-Off Delay Time
47ns
Turn-On Delay Time
12ns
DC Rated Voltage
600V
Weight
0.26037g
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FCD5N60TM Datasheet
Download the complete datasheet for Onsemi FCD5N60TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
