N-Channel Power MOSFET featuring 600V drain-source voltage and 7.3A continuous drain current. This surface-mount device offers a low 620mΩ drain-to-source resistance and is packaged in a DPAK for tape and reel applications. Key switching characteristics include a 15ns turn-on delay and 10ns fall time, with a maximum power dissipation of 89W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is designed for high efficiency.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FCD620N60ZF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
7.3A
Drain to Source Resistance
620mR
Drain to Source Voltage (Vdss)
600V
Element Configuration
Single
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
1.135nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
89W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
620mR
RoHS Compliant
Yes
Series
HiPerFET™, Polar™
Turn-Off Delay Time
35ns
Turn-On Delay Time
15ns
Weight
0.26037g
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FCD620N60ZF Datasheet
Download the complete datasheet for Onsemi FCD620N60ZF to view detailed technical specifications.
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