N-Channel Power MOSFET featuring 600V drain-source voltage and 7.3A continuous drain current. This surface-mount device offers a low 620mΩ drain-to-source resistance and is packaged in a DPAK for tape and reel applications. Key switching characteristics include a 15ns turn-on delay and 10ns fall time, with a maximum power dissipation of 89W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is designed for high efficiency.
Onsemi FCD620N60ZF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Resistance | 620mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 1.135nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 620mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.26037g |
| Width | 2.39mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCD620N60ZF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.