
N-Channel Power MOSFET featuring SUPERFET® Easy Drive technology. 600V drain-source breakdown voltage and 7A continuous drain current. Low 600mΩ maximum drain-source on-resistance. TO-252-3 (DPAK) surface-mount package with 83W maximum power dissipation. Includes fast switching characteristics with 35ns turn-on delay and 32ns fall time. RoHS compliant and lead-free.
Onsemi FCD7N60TM-WS technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 600MR |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCD7N60TM-WS to view detailed technical specifications.
No datasheet is available for this part.
