N-Channel Power MOSFET, SuperFET® II series, offering a 600V drain-source voltage and 4.5A continuous drain current. Features a low 900mΩ drain-source resistance (Rds On Max) and a 650V breakdown voltage. Designed for surface mounting in a DPAK package, this component boasts fast switching speeds with a 10.9ns turn-on delay and 11.9ns fall time. Maximum power dissipation is 52W, with operating temperatures ranging from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FCD900N60Z technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 11.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 720pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Turn-Off Delay Time | 33.6ns |
| Turn-On Delay Time | 10.9ns |
| Weight | 0.26037g |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCD900N60Z Datasheet
Download the complete datasheet for Onsemi FCD900N60Z to view detailed technical specifications.
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