N-Channel Power MOSFET featuring SUPERFET® II technology for enhanced performance. This single element transistor offers a 600V drain-to-source breakdown voltage and a continuous drain current of 77A. With a low 41mΩ drain-to-source resistance (Rds On Max), it is designed for efficient power switching. The TO-247 package facilitates through-hole mounting and supports a maximum power dissipation of 592W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a rail/tube package.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power592W
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Technical Specifications
Onsemi FCH041N60E technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 77A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.82mm |
| Input Capacitance | 13.7nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 592W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 592W |
| Rds On Max | 41mR |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Turn-Off Delay Time | 320ns |
| Turn-On Delay Time | 50ns |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCH041N60E Datasheet
Download the complete datasheet for Onsemi FCH041N60E to view detailed technical specifications.
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