
N-Channel Power MOSFET, SUPERFET® II, FRFET® technology, 600V drain-source breakdown voltage, 76A continuous drain current, and 41mΩ drain-source resistance. Features a TO-247-3 package for through-hole mounting, with a maximum power dissipation of 595W. Operates across a wide temperature range from -55°C to 150°C, offering fast switching characteristics with turn-on delay of 63ns and fall time of 53ns. RoHS compliant and lead-free.
Onsemi FCH041N60F technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 53ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.82mm |
| Input Capacitance | 14.365nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 595W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 595W |
| Radiation Hardening | No |
| Rds On Max | 41mR |
| RoHS Compliant | Yes |
| Series | SuperFETII® |
| Turn-Off Delay Time | 244ns |
| Turn-On Delay Time | 63ns |
| Weight | 6.39g |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCH041N60F to view detailed technical specifications.
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