
N-channel Power MOSFET with 600V drain-source breakdown voltage and 52A continuous drain current. Features 72mΩ maximum drain-source on-resistance and 481W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, this component offers fast switching speeds with a 43ns turn-on delay and 25ns fall time. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
Onsemi FCH072N60F technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.82mm |
| Input Capacitance | 8.66nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 481W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 481W |
| Radiation Hardening | No |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | FRFET®, SuperFET® II |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 43ns |
| Weight | 6.39g |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCH072N60F to view detailed technical specifications.
No datasheet is available for this part.
