N-channel Power MOSFET featuring SUPERFET II and FRFET technologies. 600V drain-source voltage (Vdss) with a 650V breakdown voltage. Continuous drain current (ID) of 37A and a low 104mΩ drain-source resistance (Rds On Max). TO-247 package for through-hole mounting, with a maximum power dissipation of 357W. Operates from -55°C to 150°C.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power357W
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Technical Specifications
Onsemi FCH104N60F technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 37A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 104mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 20.82mm |
| Input Capacitance | 5.95nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 357W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 357W |
| Radiation Hardening | No |
| Rds On Max | 104mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar™ |
| Turn-Off Delay Time | 98ns |
| Turn-On Delay Time | 34ns |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCH104N60F Datasheet
Download the complete datasheet for Onsemi FCH104N60F to view detailed technical specifications.
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