N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 25A continuous drain current. This single element transistor boasts a low 126mΩ drain-to-source resistance and is housed in a TO-247 package for through-hole mounting. With a maximum power dissipation of 216W and fast switching characteristics including a 5ns fall time, it operates within a -55°C to 150°C temperature range. RoHS compliant and part of the SupreMOS™ series, this component offers efficient power management.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power216W
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Technical Specifications
Onsemi FCH25N60N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 108mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.82mm |
| Input Capacitance | 3.352nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 216W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 216W |
| Radiation Hardening | No |
| Rds On Max | 126mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 21ns |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCH25N60N Datasheet
Download the complete datasheet for Onsemi FCH25N60N to view detailed technical specifications.
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