N-channel enhancement mode power MOSFET designed for high voltage applications. Features a maximum drain-source voltage of 600V and a continuous drain current of 35A. This single-element transistor utilizes SuperFET process technology and offers a low drain-source on-resistance of 98mΩ at 10V. Packaged in a TO-247 through-hole configuration with 3 pins and a tab, it supports a wide operating temperature range from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Onsemi FCH35N60 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.62 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 20.57 |
| Seated Plane Height (mm) | 24.38 |
| Pin Pitch (mm) | 5.56 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SuperFET |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 35A |
| Maximum Drain Source Resistance | 98@10VmOhm |
| Typical Gate Charge @ Vgs | 139@10VnC |
| Typical Gate Charge @ 10V | 139nC |
| Typical Input Capacitance @ Vds | 4990@25VpF |
| Maximum Power Dissipation | 312500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi FCH35N60 Datasheet
Download the complete datasheet for Onsemi FCH35N60 to view detailed technical specifications.
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