
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 47A continuous drain current. This single element MOSFET offers a low 62mΩ maximum drain-source resistance and 368W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include 11ns turn-on delay and 22ns fall time.
Onsemi FCH47N60N technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 51.5mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21mm |
| Input Capacitance | 6.7nF |
| Length | 15.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 368W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 368W |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 11ns |
| Weight | 6.39g |
| Width | 5.03mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCH47N60N to view detailed technical specifications.
No datasheet is available for this part.
