
N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 45.8A continuous drain current. This through-hole component offers a low 65mΩ drain-to-source resistance and 368W maximum power dissipation. Designed with a TO-247 package, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with a 4ns fall time.
Onsemi FCH47N60NF technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 45.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 57.5mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.82mm |
| Input Capacitance | 6.12nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 368W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 368W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 117ns |
| Turn-On Delay Time | 34ns |
| Weight | 6.39g |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCH47N60NF to view detailed technical specifications.
No datasheet is available for this part.
