N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 76A continuous drain current. This single element transistor offers a low 36mΩ drain-source resistance (Rds On Max) and 28mΩ drain-source resistance. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 543W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 32ns fall time and 34ns turn-on delay time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power543W
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Technical Specifications
Onsemi FCH76N60N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 76A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21mm |
| Input Capacitance | 12.385nF |
| Length | 15.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 543W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 235ns |
| Turn-On Delay Time | 34ns |
| Weight | 6.39g |
| Width | 5.03mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCH76N60N Datasheet
Download the complete datasheet for Onsemi FCH76N60N to view detailed technical specifications.
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