N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 72.8A continuous drain current. This single element MOSFET offers a low 38mΩ drain-source resistance at 10Vgs and 38mΩ Rds On Max. Designed for through-hole mounting in a TO-247 package, it boasts a maximum power dissipation of 543W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 51ns turn-on delay and 43ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power543W
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Technical Specifications
Onsemi FCH76N60NF technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 72.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 28.7mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.82mm |
| Input Capacitance | 11.045nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 543W |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 213ns |
| Turn-On Delay Time | 51ns |
| Weight | 6.39g |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCH76N60NF Datasheet
Download the complete datasheet for Onsemi FCH76N60NF to view detailed technical specifications.
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