N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. This Easy Drive MOSFET offers a low 600mΩ drain-source on-resistance and 83W maximum power dissipation. Designed for through-hole mounting in a TO-262 package, it boasts a 3V threshold voltage and fast switching characteristics with turn-on delay of 35ns and fall time of 32ns. Operating temperature range is -55°C to 150°C, with lead-free and RoHS compliance.
PackageTO-262
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FCI7N60 technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 11.05mm |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 600V |
| Weight | 2.084g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCI7N60 Datasheet
Download the complete datasheet for Onsemi FCI7N60 to view detailed technical specifications.
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