N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 13A continuous drain current. This SupreMOS™ device offers a low 258mΩ Rds(on) and 116W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it boasts fast switching characteristics with a 9.8ns fall time. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power116W
Quick Jump:
Technical Specifications
Onsemi FCP13N60N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
244mR
Drain to Source Voltage (Vdss)
600V
Element Configuration
Single
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
30V
Height
9.4mm
Input Capacitance
1.765nF
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
116W
Mount
Through Hole
Package Quantity
400
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
116W
Radiation Hardening
No
Rds On Max
258mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SupreMOS™
Threshold Voltage
2V
Turn-Off Delay Time
45ns
Turn-On Delay Time
14.5ns
Weight
1.8g
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FCP13N60N Datasheet
Download the complete datasheet for Onsemi FCP13N60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
