
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 22A continuous drain current. Offers a low 165mΩ maximum drain-source on-resistance and 140mΩ typical resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 205W and operates within a temperature range of -55°C to 150°C. Fast switching characteristics include a 4ns fall time.
Onsemi FCP22N60N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 165mR |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.95nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 205W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 205W |
| Rds On Max | 165mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 16.9ns |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCP22N60N to view detailed technical specifications.
No datasheet is available for this part.
