N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 36A continuous drain current. Offers low 90mΩ drain-source on-resistance and 312W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this single-element transistor boasts fast switching speeds with a 4ns fall time. Operating temperature range from -55°C to 150°C, with RoHS compliance.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power312W
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Technical Specifications
Onsemi FCP36N60N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 81mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 90MR |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.51mm |
| Input Capacitance | 4.785nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 312W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SupreMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 94ns |
| Turn-On Delay Time | 23ns |
| Weight | 2.421g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCP36N60N Datasheet
Download the complete datasheet for Onsemi FCP36N60N to view detailed technical specifications.
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