
N-Channel Power MOSFET, SUPERFET® II series, featuring a 600V drain-source voltage and 10.2A continuous drain current. This through-hole component offers a low 380mΩ drain-source resistance and a 650V breakdown voltage. Designed for efficient switching, it exhibits a 6ns fall time and 14ns turn-on delay. Packaged in a TO-220 case, it operates within a -55°C to 150°C temperature range and supports up to 106W power dissipation.
Onsemi FCP380N60 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 1.665nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 106W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 1.8g |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCP380N60 to view detailed technical specifications.
No datasheet is available for this part.
