N-Channel Power MOSFET featuring SUPERFET® II Easy Drive technology. 600V drain-to-source breakdown voltage and 10.2A continuous drain current. Low 380mΩ drain-to-source resistance. TO-220 package for through-hole mounting. 106W maximum power dissipation.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power106W
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Technical Specifications
Onsemi FCP380N60E technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 1.77nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 106W |
| Mount | Through Hole |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 106W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 17ns |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCP380N60E Datasheet
Download the complete datasheet for Onsemi FCP380N60E to view detailed technical specifications.
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