N-Channel Power MOSFET featuring SUPERFET® Easy Drive technology. 600V drain-source breakdown voltage and 11A continuous drain current. Low 380mΩ drain-source on-resistance ensures efficient power handling. TO-220F package for through-hole mounting. Operates from -55°C to 150°C with a maximum power dissipation of 36W.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FCPF11N60 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
380MR
Element Configuration
Single
Fall Time
56ns
Gate to Source Voltage (Vgs)
30V
Height
9.19mm
Input Capacitance
1.49nF
Lead Free
Lead Free
Length
10.16mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
36W
Radiation Hardening
No
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperFET™
Threshold Voltage
5V
Turn-Off Delay Time
119ns
Turn-On Delay Time
34ns
DC Rated Voltage
600V
Weight
2.27g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FCPF11N60 Datasheet
Download the complete datasheet for Onsemi FCPF11N60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
