FCPF11N60NT

N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 10.8A continuous drain current. This through-hole mounted component offers a low 299mΩ Rds On, 1.505nF input capacitance, and fast switching speeds with a 10ns fall time. Designed for high-efficiency power applications, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 32.1W. The TO-220F package ensures robust thermal performance.