N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 258mΩ drain-source resistance (Rds On Max) and operates with a 2V threshold voltage. Designed for efficient switching, it exhibits a 9.8ns fall time and 14.5ns turn-on delay. The MOSFET is housed in a TO-220-3 package, rated for a maximum power dissipation of 33.8W, and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power33.8W
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Technical Specifications
Onsemi FCPF13N60NT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 258mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.9mm |
| Input Capacitance | 1.765nF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33.8W |
| Radiation Hardening | No |
| Rds On Max | 258mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMOS™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14.5ns |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCPF13N60NT Datasheet
Download the complete datasheet for Onsemi FCPF13N60NT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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