N-Channel Power MOSFET featuring 600V drain-source voltage and 20.2A continuous drain current. This device offers a low 199mΩ drain-source resistance and a maximum power dissipation of 39W. Key switching characteristics include a 20ns turn-on delay and a 5ns fall time. Packaged in a TO-220F for through-hole mounting, it operates from -55°C to 150°C and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power39W
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Technical Specifications
Onsemi FCPF190N60 technical specifications.
General
| Continuous Drain Current (ID) | 20.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 199mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.07mm |
| Input Capacitance | 2.22nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 39W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 20ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCPF190N60 Datasheet
Download the complete datasheet for Onsemi FCPF190N60 to view detailed technical specifications.
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