N-Channel Power MOSFET, SUPERFET® II series, featuring 600V drain-source voltage and 20.6A continuous drain current. This Easy Drive MOSFET offers a low 190mΩ drain-source resistance (Rds On Max) and a 2.5V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 39W. Key switching characteristics include a 23ns turn-on delay and 40ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power39W
Quick Jump:
Technical Specifications
Onsemi FCPF190N60E technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
20.6A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Element Configuration
Single
Fall Time
40ns
Gate to Source Voltage (Vgs)
30V
Height
9.19mm
Input Capacitance
3.175nF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
39W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
39W
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperFET® II
Threshold Voltage
2.5V
Turn-Off Delay Time
212ns
Turn-On Delay Time
23ns
Weight
2.27g
Width
4.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FCPF190N60E Datasheet
Download the complete datasheet for Onsemi FCPF190N60E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
