N-Channel Power MOSFET featuring SUPERFET II technology for efficient power switching. Offers a 600V drain-source voltage (Vdss) and a continuous drain current (ID) of 15A. Low on-resistance (Rds On Max) of 260mΩ ensures minimal power loss. Designed with Easy Drive technology for simplified gate drive requirements. Packaged in a TO-220F (TO-220-3) through-hole mount package.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power36W
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Technical Specifications
Onsemi FCPF260N60E technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.07mm |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 36W |
| Rds On Max | 260mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 20ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCPF260N60E Datasheet
Download the complete datasheet for Onsemi FCPF260N60E to view detailed technical specifications.
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