
N-channel Power MOSFET featuring SUPERFET® II technology. 600V drain-source breakdown voltage and 10.2A continuous drain current. Low 380mΩ drain-source resistance. TO-220F package for through-hole mounting. Fast switching with 6ns fall time and 14ns turn-on delay. Maximum power dissipation of 31W.
Onsemi FCPF380N60 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.19mm |
| Input Capacitance | 1.665nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCPF380N60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
