Onsemi
FCPF380N60-F152
Power Field-Effect Transistor, 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power31W
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Technical Specifications
Onsemi FCPF380N60-F152 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10.2A
Drain to Source Resistance
330mR
Drain to Source Voltage (Vdss)
600V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.665nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
31W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
31W
Rds On Max
380mR
RoHS Compliant
Yes
Series
SuperFET® II
Turn-Off Delay Time
6ns
Turn-On Delay Time
7ns
Weight
0.090478oz
Compliance
RoHS
Compliant
Datasheet
Onsemi FCPF380N60-F152 Datasheet
Download the complete datasheet for Onsemi FCPF380N60-F152 to view detailed technical specifications.
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