N-channel Power MOSFET with 800V drain-source voltage and 11A continuous drain current. Features 400mΩ drain-to-source resistance and a TO-220-3 through-hole package. Operates from -55°C to 150°C with 35.7W maximum power dissipation. Includes 20ns turn-on delay and 15ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FCPF400N80Z technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 4.5V |
| Height | 16.07mm |
| Input Capacitance | 2.35nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35.7W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 400mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 20ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCPF400N80Z Datasheet
Download the complete datasheet for Onsemi FCPF400N80Z to view detailed technical specifications.
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