N-Channel Power MOSFET featuring SUPERFET® II technology. 600V drain-source breakdown voltage and 7.4A continuous drain current. Low 600mΩ drain-source resistance at 10Vgs. TO-220F package for through-hole mounting. Fast switching speeds with 9ns fall time and 13ns turn-on delay. Maximum power dissipation of 89W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power28W
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Technical Specifications
Onsemi FCPF600N60Z technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.07mm |
| Input Capacitance | 1.12nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 13ns |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCPF600N60Z Datasheet
Download the complete datasheet for Onsemi FCPF600N60Z to view detailed technical specifications.
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