
N-Channel Power MOSFET featuring SUPERFET® Easy Drive technology. This through-hole component offers a 600V drain-source breakdown voltage and a continuous drain current of 7A. It boasts a low on-resistance of 600mΩ and is packaged in a TO-220-3 configuration. Key switching characteristics include a 35ns turn-on delay and a 32ns fall time. Maximum power dissipation is rated at 31W, with operating temperatures ranging from -55°C to 150°C.
Onsemi FCPF7N60YDTU technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 920pF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | SuperFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| Weight | 2.565g |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FCPF7N60YDTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.