N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 9A continuous drain current. This single-element transistor offers a low 385mΩ drain-source on-resistance and is housed in a TO-220F package for through-hole mounting. Key performance characteristics include a 12.7ns turn-on delay, 36.9ns turn-off delay, and 10.2ns fall time. Maximum power dissipation is 29.8W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power29.8W
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Technical Specifications
Onsemi FCPF9N60NT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 10.2ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.9mm |
| Input Capacitance | 1.24nF |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 29.8W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 29.8W |
| Radiation Hardening | No |
| Rds On Max | 385mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMOS™ |
| Turn-Off Delay Time | 36.9ns |
| Turn-On Delay Time | 12.7ns |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCPF9N60NT Datasheet
Download the complete datasheet for Onsemi FCPF9N60NT to view detailed technical specifications.
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