N-Channel Power MOSFET featuring SuperFET® II technology. 600V drain-source voltage (Vdss) with a 675V breakdown voltage. Continuous drain current (ID) of 4.5A and a maximum Rds On of 900mΩ. IPAK package (TO-251-3) for through-hole mounting, with a maximum power dissipation of 52W. Fast switching speeds with turn-on delay of 10.9ns and fall time of 11.9ns.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power52W
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Technical Specifications
Onsemi FCU900N60Z technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 675V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 11.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.3mm |
| Input Capacitance | 710pF |
| Lead Free | Lead Free |
| Length | 6.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52W |
| Rds On Max | 900mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperFET® II |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 33.6ns |
| Turn-On Delay Time | 10.9ns |
| Weight | 0.539g |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FCU900N60Z Datasheet
Download the complete datasheet for Onsemi FCU900N60Z to view detailed technical specifications.
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