N-Channel PowerTrench® MOSFET featuring 75V drain-source breakdown voltage and 235A continuous drain current. Offers a low 3.2mΩ drain-source on-resistance at a 10V gate-source voltage. Designed for through-hole mounting with a maximum power dissipation of 375W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 230ns and fall time of 121ns.
Onsemi FDA032N08 technical specifications.
| Continuous Drain Current (ID) | 235A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 3.2MR |
| Element Configuration | Single |
| Fall Time | 121ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 15.16nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 375W |
| Rds On Max | 3.2mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 335ns |
| Turn-On Delay Time | 230ns |
| Weight | 6.401g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDA032N08 to view detailed technical specifications.
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