The FDA15N65 is a single N-channel MOSFET with a drain to source breakdown voltage of 650V and a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 260W and a drain to source resistance of 440mR. The device is packaged in a through hole package and is lead free. The FDA15N65 is suitable for high power applications requiring a high voltage and current rating.
MountingThrough Hole
PolarityN-CHANNEL
Power260W
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Technical Specifications
Onsemi FDA15N65 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 650V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.095nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 260W |
| Rds On Max | 440mR |
| Series | UniFET™ |
| Turn-Off Delay Time | 105ns |
| Weight | 6.401g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDA15N65 Datasheet
Download the complete datasheet for Onsemi FDA15N65 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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