N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. Offers 260mΩ maximum drain-source on-resistance. Designed with a TO-3P through-hole package, this single element MOSFET operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 388W. Includes fast switching characteristics with a 45ns turn-on delay and 60ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power388W
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Technical Specifications
Onsemi FDA20N50F technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 260MR |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 3.39nF |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 388W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 388W |
| Radiation Hardening | No |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 45ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA20N50F Datasheet
Download the complete datasheet for Onsemi FDA20N50F to view detailed technical specifications.
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