N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 24A continuous drain current. Offers a low 200mΩ drain-source on-resistance and 270W maximum power dissipation. This single-element transistor operates within a -55°C to 150°C temperature range and is packaged in a TO-3P through-hole mount. Key switching characteristics include a 49ns turn-on delay and 87ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power270W
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Technical Specifications
Onsemi FDA24N50F technical specifications.
General
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 200MR |
| Element Configuration | Single |
| Fall Time | 87ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.31nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 270W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 165ns |
| Turn-On Delay Time | 49ns |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA24N50F Datasheet
Download the complete datasheet for Onsemi FDA24N50F to view detailed technical specifications.
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