N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 28A continuous drain current. Offers a maximum on-resistance of 155mΩ at a 10V gate-source voltage. Designed for high power applications with a maximum power dissipation of 310W and a maximum operating temperature of 150°C. This single-element MOSFET is packaged in a TO-3P through-hole mount, with typical turn-on delay time of 56ns and fall time of 110ns.
MountingThrough Hole
PolarityN-CHANNEL
Power310W
Quick Jump:
Technical Specifications
Onsemi FDA28N50 technical specifications.
General
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 155mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 155MR |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 5.14nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 155mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 56ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA28N50 Datasheet
Download the complete datasheet for Onsemi FDA28N50 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
