N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 28A continuous drain current. Offers 175mΩ drain-source resistance (Rds On) and 310W maximum power dissipation. This single element transistor operates within a temperature range of -55°C to 150°C and is packaged in a TO-3P through-hole mount. Key switching characteristics include a 67ns turn-on delay and 101ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FDA28N50F technical specifications.
General
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 175mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 101ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 5.387nF |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 175mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 192ns |
| Turn-On Delay Time | 67ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA28N50F Datasheet
Download the complete datasheet for Onsemi FDA28N50F to view detailed technical specifications.
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