N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 33A continuous drain current. This UniFET™ series component offers a low 94mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 245W. Designed for through-hole mounting in a TO-3P package, it exhibits turn-on delay time of 33ns and fall time of 68ns. Operating temperature range spans from -55°C to 150°C.
MountingThrough Hole
PolarityN-CHANNEL
Power245W
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Technical Specifications
Onsemi FDA33N25 technical specifications.
General
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 94mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.1mm |
| Input Capacitance | 2.2nF |
| Length | 16.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 245W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 245W |
| Rds On Max | 94mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 77ns |
| Turn-On Delay Time | 33ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA33N25 Datasheet
Download the complete datasheet for Onsemi FDA33N25 to view detailed technical specifications.
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