N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 38A continuous drain current. This single-element MOSFET offers a maximum drain-source on-resistance of 85mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-3 package, it boasts a maximum power dissipation of 312W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 54ns fall time and 118ns turn-off delay.
PackageTO-3
MountingThrough Hole
PolarityN-CHANNEL
Power312W
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Technical Specifications
Onsemi FDA38N30 technical specifications.
General
| Package/Case | TO-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 85MR |
| Element Configuration | Single |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 312W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 312W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 118ns |
| Turn-On Delay Time | 53ns |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA38N30 Datasheet
Download the complete datasheet for Onsemi FDA38N30 to view detailed technical specifications.
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