N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 59A continuous drain current. This UniFET™ device offers a low 49mΩ drain-source resistance at a nominal 5V gate-source voltage. With a maximum power dissipation of 392W and through-hole mounting in a TO-3P package, it exhibits fast switching characteristics with turn-on delay of 70ns and fall time of 170ns. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power392W
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Technical Specifications
Onsemi FDA59N25 technical specifications.
General
| Continuous Drain Current (ID) | 59A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 170ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.02nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 392W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 392W |
| Radiation Hardening | No |
| Rds On Max | 49mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 70ns |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA59N25 Datasheet
Download the complete datasheet for Onsemi FDA59N25 to view detailed technical specifications.
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