N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 59A continuous drain current. This UniFET™ device offers a low 56mΩ drain-source on-resistance and 500W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates from -55°C to 150°C with a 30V gate-source voltage rating. Key switching characteristics include a 140ns turn-on delay and 200ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Onsemi FDA59N30 technical specifications.
General
| Continuous Drain Current (ID) | 59A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 56mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 56MR |
| Element Configuration | Single |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.67nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Radiation Hardening | No |
| Rds On Max | 56mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 140ns |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDA59N30 Datasheet
Download the complete datasheet for Onsemi FDA59N30 to view detailed technical specifications.
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