N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 59A continuous drain current. This UniFET™ device offers a low 56mΩ drain-source on-resistance and 500W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates from -55°C to 150°C with a 30V gate-source voltage rating. Key switching characteristics include a 140ns turn-on delay and 200ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Onsemi FDA59N30 technical specifications.
General
Continuous Drain Current (ID)
59A
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
56mR
Drain to Source Voltage (Vdss)
300V
Drain-source On Resistance-Max
56MR
Element Configuration
Single
Fall Time
200ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
4.67nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500W
Mount
Through Hole
Nominal Vgs
5V
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Radiation Hardening
No
Rds On Max
56mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
UniFET™
Threshold Voltage
5V
Turn-Off Delay Time
120ns
Turn-On Delay Time
140ns
Weight
6.401g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDA59N30 Datasheet
Download the complete datasheet for Onsemi FDA59N30 to view detailed technical specifications.
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